Toshiba Electronic Devices & Storage Corporation (“Toshiba”) announced that it will construct a new 300-milimeter wafer fabrication facility for power semiconductors at its main discrete semiconductor production base, Kaga Toshiba Electronics Corporation, in Ishikawa Prefecture.
The Construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with the production start of Phase 1 scheduled for within fiscal 2024. When Phase 1 reaches full capacity, Toshiba’s power
semiconductor production capacity will be 2.5 times that of fiscal 2021.
Power devices are essential components for managing and reducing power consumption in every kind of electronic equipment, and for achieving a carbon neutral society.
Current demand is expanding on vehicle electrification and the automation of industrial equipment, with very strong demand for low-voltage MOSFETs (metal oxide semiconductor field effect transistors) and IGBTs (insulated-gate bipolar transistors) and other devices.
The new fab will have a quake absorbing structure; enhanced BCP systems, including dual power supply lines; and the latest energy saving manufacturing equipment to reduce environmental burdens.
It will also aim to achieve the “RE100” goal of 100% reliance on renewable energy. Product quality and production efficiency will be improved by introducing artificial intelligence and automated wafer transportation systems.
Toshiba will expand its power semiconductor business and boost competitiveness by timely investments and research and development that will allow it to respond to fast growing demand, and to contribute to a low-energy society and carbon neutrality.
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