SEPTEMBER, 20258TOP STORIESTOP STORIESSTL UNVEILS WORLD'S SLIMMEST IBR CABLE FOR HYPERSCALERSL&T SEMICONDUCTOR EXPANDS PORTFOLIO WITH FUJITSU POWER MODULE ASSETS IN NOIDASTL, an optical and digital solutions organization, announced the launch of the world's slimmest IBR cable with 864F for hyperscalers in the United States, creating a new category of high-density fiber connectivity that is completely limitless. The all-new Celesta IBR cable is specially created to be efficient in data center environments, where space, speed, and reliability are the parameters that matter.The slim 11.7 mm design has a flat profile that is designed to fit a 14 mm inner duct. Specifically, it fits in 14/18 mm micro subducts and depending on the how it is deployed even smaller diameter subducts can be used. The 864 Fiber is one of the densest solutions available on the market today.The cable uses bend-insensitive, HD G.657.A2 200-micron fiber to withstand harsh environments for longevity, while providing high bend performance and maximizes the efficiency of installation in duct systems.Speaking about this development, Dr. Badri Gomatam, CTO, STL, said,"Our breakthrough Celesta IBR cable is a testament to STL's commitment to advanced engineering and customer-centric innovation... foundation for next-generation digital infrastructure."In performance testing, the cable was jetted 4,700 feet in under 20 minutes. The cable design reduces the time and labour effort for deployment of hyperscale networks. The intermittent bonded ribbon design also accommodates mass fusion splicing that can also improve productivity in large data center builds and fiber to cabinet installation.The cable is fully compliant with ICEA 122-744 and GR-20 standards and has undergone thorough testing in IEC compliant track layouts to guarantee dependability for rigorous environments in U.S. hyperscalers. STL underscored how the new product demonstrates STL's engineering capability with a wider IBR portfolio continuing from 12F to 6,912F. the way to a broader product range to serve industrial, energy, and automotive needs.Highlighting the importance of this move, LTSCT Chief Executive Sandeep Kumar stated, "The acquisition of power module technology is a crucial step in LTSCT's growth journey and an important step towards our vision of enhancing India's presence in the global semiconductor ecosystem. This significantly strengthens our global intellectual property portfolio, and enhances our design capabilities, thus reinforcing our commitment to delivering world-class semiconductor solutions globally."The acquisition is not just an addition of strength to the semiconductor ecosystem in India, but it also indicates the increasing international partnerships. Expressing confidence in the transition, FGEL Director and COO Tadashi Hasegawa said, "We are pleased to see our power module business become a part of LTSCT -- a leading semiconductor company from India that shares our commitment to innovation and technological excellence. We are sure that this transfer will ensure the continued development and expansion of cutting-edge power module technologies, benefiting global customers and driving industry-wide advancements."Industry analysts view the agreement as a landmark achievement in making India more active in the global semiconductor value chain, which is increasingly a power electronics-dependent segment of the global industry and next-generation technologies.L&T Semiconductor Technologies (LTSCT) declared power module design assets acquisition over Japan-based Fujitsu General Electronics (FGEL). The acquisition encompasses the state-of-the-art research and design equipment, design patents and intellectual property associated with the technologies of the power modules and represents a strategic step in India's hopes to increase its semiconductor project footprint.The company highlights that this acquisition will strengthen LTSCT in power electronics design and development, and open
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